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F04200 - SEMI F42 - Test Method for Semiconductor Processing Equipment Voltage Sag Immunity Revision:SEMI F42-0200 - Replaced SEMI E81 — Provisional Specification

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Description

SEMI E81 — Provisional Specification for CIM Framework Domain

SEMI E116-1017 (technical revision)

The test method covers both the radiated susceptibility (RS) and conducted susceptibility (CS) of the MFC when exposed to EMI

This Standard covers only load ports for reticle SMIF pods (RSPs) as specified in SEMI E100

The scope of this Document covers high purity 3DMAS which is used in the semiconductor industry for the deposition of silicon oxide

F04200 - SEMI F42 - Test Method for Semiconductor Processing Equipment Voltage Sag Immunity Revision:SEMI F42-0200 - Replaced SEMI E81 — Provisional SpecificationNOTICE: This Document is no longer supported by the global technical committee. It has been replaced by SEMI F47. The purpose of this Document is to define the test method used to characterize the susceptibility of semiconductor processing, metrology, and automated test equipment to voltage sags. This Document defines the testing procedures and test equipment required to characterize the susceptibility of equipment to voltage sags by showing voltage

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